sot23 p-channel enhancement mode vertical dmos fet issue 3 ? october 1995 j features * 100 volt v ds *r ds(on) =20 w complementary type - ZVN3310F partmarking detail - mr absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -100 v continuous drain current at t amb =25c i d 75 ma pulsed drain current i dm -1.2 a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss -100 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -1.5 -3.5 v i d =-1ma, v ds = v gs gate-body leakage i gss -20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss -1 -50 m a m a v ds =-100v, v gs =0 v ds =-80v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) -300 ma v ds =-25 v, v gs =-10v static drain-source on-state resistance (1) r ds(on) 20 w v gs =-10v, i d =-150ma forward transconductance (1)(2) g fs 50 ms v ds =-25v, i d =-150ma input capacitance (2) c iss 50 pf common source output capacitance (2) c oss 15 pf v ds =-25v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 5pf turn-on delay time (2)(3) t d(on) 8ns v dd ? -25v, i d =-150ma rise time (2)(3) t r 8ns turn-off delay time (2)(3) t d(off) 8ns fall time (2)(3) t f 8ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator zvp3310f d g s typical characteristics v drain source voltage saturation characteristics v gs- gate source voltage (volts) 0 -10 -6 -2 -4 -8 0-2 -4 -6 -8 -10 i d= -0.3a -0.15a -0.075a -2 -4 -6 -8 -10 saturation characteristics 0 v ds - drain source voltage (volts) i - dra i n c u rre n t (am p s) -5v -4v -0.6 -0.4 -0.2 -10v -8v -6v -9v -7v v gs= -20v -12v -16v -14v normalised r ds(on) and v gs(th) v temperature t j -junction temperature (c) n or m al i sed r a n d v -40 -20 0 20 40 60 80 120 100 140 160 i d= -150ma v gs= -10v i d= -1ma v gs= v ds 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 2.6 180 transconductance v drain current i d - drain current (amps ) g f s -tra n sco n d ucta n ce (ms) 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 0 v ds= -10v 30 20 10 40 80 70 60 50 90 100 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 0 v ds= -10v 30 20 10 40 80 70 60 50 90 100 v ds -drain source voltage (volts) capacitance v drain-source voltage c -ca p a ci ta n ce ( p f ) c oss c iss c rss 0 -20 -40 -60 -80 v gs= 0v f =1mhz 0 30 20 10 40 50 0 q-charge (nc) v g s -ga te s ou r ce vol ta g e ( v o l ts ) gate charge v gate-source voltage -6 -8 -10 -14 -16 -12 -4 -2 0 v ds = -25v i d= - 0.2a -50v -100v 0.2 0.4 0.6 0.8 1.0 1.2 zvp3310f 3 - 436 3 - 437
sot23 p-channel enhancement mode vertical dmos fet issue 3 ? october 1995 j features * 100 volt v ds *r ds(on) =20 w complementary type - ZVN3310F partmarking detail - mr absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -100 v continuous drain current at t amb =25c i d 75 ma pulsed drain current i dm -1.2 a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss -100 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -1.5 -3.5 v i d =-1ma, v ds = v gs gate-body leakage i gss -20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss -1 -50 m a m a v ds =-100v, v gs =0 v ds =-80v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) -300 ma v ds =-25 v, v gs =-10v static drain-source on-state resistance (1) r ds(on) 20 w v gs =-10v, i d =-150ma forward transconductance (1)(2) g fs 50 ms v ds =-25v, i d =-150ma input capacitance (2) c iss 50 pf common source output capacitance (2) c oss 15 pf v ds =-25v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 5pf turn-on delay time (2)(3) t d(on) 8ns v dd ? -25v, i d =-150ma rise time (2)(3) t r 8ns turn-off delay time (2)(3) t d(off) 8ns fall time (2)(3) t f 8ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator zvp3310f d g s typical characteristics v drain source voltage saturation characteristics v gs- gate source voltage (volts) 0 -10 -6 -2 -4 -8 0-2 -4 -6 -8 -10 i d= -0.3a -0.15a -0.075a -2 -4 -6 -8 -10 saturation characteristics 0 v ds - drain source voltage (volts) i - dra i n c u rre n t (am p s) -5v -4v -0.6 -0.4 -0.2 -10v -8v -6v -9v -7v v gs= -20v -12v -16v -14v normalised r ds(on) and v gs(th) v temperature t j -junction temperature (c) n or m al i sed r a n d v -40 -20 0 20 40 60 80 120 100 140 160 i d= -150ma v gs= -10v i d= -1ma v gs= v ds 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 2.6 180 transconductance v drain current i d - drain current (amps ) g f s -tra n sco n d ucta n ce (ms) 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 0 v ds= -10v 30 20 10 40 80 70 60 50 90 100 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 0 v ds= -10v 30 20 10 40 80 70 60 50 90 100 v ds -drain source voltage (volts) capacitance v drain-source voltage c -ca p a ci ta n ce ( p f ) c oss c iss c rss 0 -20 -40 -60 -80 v gs= 0v f =1mhz 0 30 20 10 40 50 0 q-charge (nc) v g s -ga te s ou r ce vol ta g e ( v o l ts ) gate charge v gate-source voltage -6 -8 -10 -14 -16 -12 -4 -2 0 v ds = -25v i d= - 0.2a -50v -100v 0.2 0.4 0.6 0.8 1.0 1.2 zvp3310f 3 - 436 3 - 437
|
